| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of enhancing switching characteristics, and to provide its fabricating process. SOLUTION: A vertical MOSFET has a base region 22 formed on a drain region 21, and a source region 23 formed in the base region. A trench 24 penetrates the source region from the surface thereof to reach at least the vicinity of the drain region. A gate insulation film 25 is formed on the sidewall and the bottom of the trench and at least a part of a gate electrode 26 is formed in the trench. Impurity concentration profile in the base region has a first peak in the vicinity of the interface between the source region and the base region, and a second peak lower than the first peak in the vicinity of the interface between the base region and the drain region. The first peak determines a threshold voltage, and the second peak determines the dosage of the base region. COPYRIGHT: (C)2005,JPO&NCIPI
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