| 发明名称 |
Method of fabricating a semiconductor device |
| 摘要 |
This invention relates to Integrated Circuit (IC) processing and fabrication. A device and a method are provided for etching an opening in an insulating layer while depositing a barrier layer on the side walls of the opening without essentially depositing a barrier layer on the bottom of the opening.
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| 申请公布号 |
US2005048782(A1) |
申请公布日期 |
2005.03.03 |
| 申请号 |
US20040962303 |
申请日期 |
2004.10.08 |
| 申请人 |
VANHAELEMEERSCH SERGE;MAEX KAREN |
发明人 |
VANHAELEMEERSCH SERGE;MAEX KAREN |
| 分类号 |
H01L21/28;H01L21/3065;H01L21/311;H01L21/768;H01L23/485;H01L23/522;H01L23/532;(IPC1-7):H01L21/28;H01L21/44;H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
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