发明名称 TRANSITION METAL ALLOYS FOR USE AS A GATE ELECTRODE AND DEVICES INCORPORATING THESE ALLOYS
摘要 <p>Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.</p>
申请公布号 WO2005020329(A1) 申请公布日期 2005.03.03
申请号 WO2004US25977 申请日期 2004.08.11
申请人 INTEL CORPORATION 发明人 DOCZY, MARK;BAXTER, NATHAN;CHAU, ROBERT;HARKONEN, KARI;LANG, TEEMU
分类号 C22C32/00;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L29/49;(IPC1-7):H01L29/51;H01L29/43;H01L21/823;C22C30/00;C22C14/00 主分类号 C22C32/00
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