发明名称 |
TRANSITION METAL ALLOYS FOR USE AS A GATE ELECTRODE AND DEVICES INCORPORATING THESE ALLOYS |
摘要 |
<p>Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.</p> |
申请公布号 |
WO2005020329(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
WO2004US25977 |
申请日期 |
2004.08.11 |
申请人 |
INTEL CORPORATION |
发明人 |
DOCZY, MARK;BAXTER, NATHAN;CHAU, ROBERT;HARKONEN, KARI;LANG, TEEMU |
分类号 |
C22C32/00;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L29/49;(IPC1-7):H01L29/51;H01L29/43;H01L21/823;C22C30/00;C22C14/00 |
主分类号 |
C22C32/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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