发明名称 SYSTEM AND METHOD FOR DIAGNOSING PLASMA PROCESSING CHAMBER TO GRASP PHYSICAL AND CHEMICAL CHARACTERISTIC BY COMPUTER SIMULATION
摘要 PURPOSE: A system and a method for diagnosing plasma processing chamber are provided to grasp and pre-estimate the characteristic of the physical and chemical phenomenon by the computer simulation linked with a theoretical model. CONSTITUTION: A plasma chamber is computer-simulated by a simulator(10) according to the numerical analysis relative to a theoretical model related to a physical/chemical reaction of the interior of a plasma chamber. The drive of the simulator(for example, starting and ending) is controlled by a server(20). All input/output data relative to the computer simulation are created/managed/controlled by a client(30).
申请公布号 KR20050019231(A) 申请公布日期 2005.03.03
申请号 KR20030056876 申请日期 2003.08.18
申请人 KIM, HEON CHANG 发明人 KIM, HEON CHANG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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