发明名称 GaN related compound semiconductor and process for producing the same
摘要 A process for producing a p-type GaN related compound semiconductor, comprising the steps of doping a GaN related compound semiconductor with p-type impurity; and subjecting the GaN related compound semiconductor to a heat treatment in a gas comprising at least oxygen.
申请公布号 EP1251567(A3) 申请公布日期 2005.03.02
申请号 EP20020013739 申请日期 1997.11.28
申请人 TOYODA GOSEI CO., LTD. 发明人 UEMURA, TOSHIYA;SHIBATA, NAOKI;NOIRI, SHIZUYO;ITO, JUN;MURAKAMI, MASANORI;KOIDE, YASUO
分类号 H01L33/00;H01L33/32;H01L33/42 主分类号 H01L33/00
代理机构 代理人
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