发明名称 Masked ion beam lithography apparatus
摘要 A particle beam exposure apparatus 1 for irradiating a target 41 with a beam of energetic electrically charged particles 21 via a pattern definition means 102 with a plurality of apertures. The patterned beam 22 emerging from said stencil mask 102 is projected, and specifically demagnified, by means of a projection system 103 onto the target 41. The apparatus further comprises an acceleration/deceleration means 32 which generates a potential gradient orientated parallel to the path of the structured beam 22, and which is constant over at least a cross-section of said beam 22. The acceleration/deceleration means 32 may comprise a sequence of equally spaced ring-shaped electrodes (see 33 in figure 2), and be located after said projection system 31, or alternatively, immediately before or after the pattern definition means 102 (see figures 6, 7 and 8).
申请公布号 GB2405525(A) 申请公布日期 2005.03.02
申请号 GB20040015996 申请日期 2004.07.16
申请人 * IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人 ELMAR * PLATZGUMMER;GERHARD * STENGL;HANS * LOESCHNER
分类号 G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/30 主分类号 G03F7/20
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