| 发明名称 |
Semiconductor light emitting element and method for fabricating the same |
| 摘要 |
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
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| 申请公布号 |
US6861672(B2) |
申请公布日期 |
2005.03.01 |
| 申请号 |
US20010011552 |
申请日期 |
2001.11.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KAMIYAMA SATOSHI;SUZUKI MASAKATSU;UENOYAMA TAKESHI;OHNAKA KIYOSHI;TAKAMORI AKIRA;MANNOH MASAYA;KIDOGUCHI ISAO;ADACHI HIDETO;ISHIBASHI AKIHIKO;FUKUHISA TOSHIYA;KUMABUCHI YASUHITO |
| 分类号 |
H01L33/16;H01L33/32;H01S5/02;H01S5/20;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/16 |
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