| 发明名称 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
| 摘要 |
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
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| 申请公布号 |
US6861340(B2) |
申请公布日期 |
2005.03.01 |
| 申请号 |
US20020326072 |
申请日期 |
2002.12.23 |
| 申请人 |
SONY CORPORATION |
发明人 |
TAKEYA MOTONOBU |
| 分类号 |
C23C16/34;H01L21/26;H01L21/268;H01L21/324;H01L21/331;H01L29/205;H01L29/73;H01L33/00;H01L33/32;H01L33/40;H01S5/323;H01S5/343;(IPC1-7):H01L21/265;H01L21/425;H01L21/21 |
主分类号 |
C23C16/34 |
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