发明名称 Pressure sensor and manufacturing method thereof
摘要 It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1x10<19 >cm<-3 >and less than 9x10<19 >cm<-3>. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per mum<2>, and preferably equal to or less than one per mum<2>. As a result, the pressure durability of the diaphragm is greatly improved.
申请公布号 US6860154(B2) 申请公布日期 2005.03.01
申请号 US20020047627 申请日期 2002.01.14
申请人 FUJIKURA LTD. 发明人 YAMAMOTO SATOSHI;NAKAO OSAMU;NISHIMURA HITOSHI;SATO MASAHIRO
分类号 G01L1/14;G01L9/00;(IPC1-7):G01L9/12;G01L7/08;G01L9/16 主分类号 G01L1/14
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