| 摘要 |
Disclosed is a method for producing a Group III nitride compound semiconductor including a pit formation step in which a portion of an uppermost layer of a first Group III nitride compound semiconductor layer containing one or more sub-layers, the portion containing lattice defects, is subjected to treatment by use of a solution or vapor which corrodes the portion more easily than it corrodes a portion of the uppermost layer containing no lattice defects, the first Group III nitride compound semiconductor layer not being accompanied by a substrate therefor as a result of removal therefrom, or being accompanied by a substrate such that the semiconductor layer is formed with or without intervention of a buffer layer provided on the substrate; and a lateral growth step of growing a second Group III nitride compound semiconductor layer through vertical and lateral epitaxial overgrowth around nuclei as seeds for crystal growth which are on flat portions of the uppermost layer of the first Group III nitride compound semiconductor layer, but not on portions of the uppermost layer that define pits formed through the pit formation step.
|
