| 发明名称 |
Method of manufacturing semiconductor device and semiconductor device |
| 摘要 |
A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed. In addition, after forming the lateral nMIS, the vertical MIS is formed. Furthermore, after forming a capacitor, an isolation part of the peripheral circuit is formed.
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| 申请公布号 |
US6861692(B2) |
申请公布日期 |
2005.03.01 |
| 申请号 |
US20030338002 |
申请日期 |
2003.01.08 |
| 申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
KUJIRAI HIROSHI;MONIWA MASAHIRO;NAKAZATO KAZUO;KISU TERUAKI;MATSUOKA HIDEYUKI;TABATA TSUYOSHI |
| 分类号 |
H01L21/768;H01L21/334;H01L21/8242;H01L27/108;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/768 |
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