发明名称 High voltage-wide band amplifier
摘要 An apparatus comprising a Darlington transistor pair, a first common-base transistor and a second common-base transistor. The Darlington transistor pair may be configured to generate an output signal in response to an input signal. The first common-base transistor may be coupled between the Darlington transistor pair and the output signal. The second common-base transistor may also be coupled between the Darlington transistor pair and the output signal. The first and second common-base transistors may each have a base configured to receive a reference voltage.
申请公布号 US6861909(B1) 申请公布日期 2005.03.01
申请号 US20020173296 申请日期 2002.06.17
申请人 SIRENZA MICRODEVICES, INC. 发明人 KOBAYASHI KEVIN W.
分类号 H03F3/19;(IPC1-7):H03F3/04 主分类号 H03F3/19
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