发明名称 |
High voltage-wide band amplifier |
摘要 |
An apparatus comprising a Darlington transistor pair, a first common-base transistor and a second common-base transistor. The Darlington transistor pair may be configured to generate an output signal in response to an input signal. The first common-base transistor may be coupled between the Darlington transistor pair and the output signal. The second common-base transistor may also be coupled between the Darlington transistor pair and the output signal. The first and second common-base transistors may each have a base configured to receive a reference voltage.
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申请公布号 |
US6861909(B1) |
申请公布日期 |
2005.03.01 |
申请号 |
US20020173296 |
申请日期 |
2002.06.17 |
申请人 |
SIRENZA MICRODEVICES, INC. |
发明人 |
KOBAYASHI KEVIN W. |
分类号 |
H03F3/19;(IPC1-7):H03F3/04 |
主分类号 |
H03F3/19 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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