| 发明名称 |
Post etching treatment process for high density oxide etcher |
| 摘要 |
A three-step polymer removal process that reverses the conventional sequence in which polymer is removed. In the preferred embodiment of the present invention the polymer is first removed from the Gas Deposition Table, after this the polymer is stripped from the inner surface of the created contact hole.
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| 申请公布号 |
US6860275(B2) |
申请公布日期 |
2005.03.01 |
| 申请号 |
US20020290128 |
申请日期 |
2002.11.07 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YOUNG BAO-RU;TSAI CHIA-SHIUNG |
| 分类号 |
B08B7/00;H01L21/02;(IPC1-7):H01L21/302;C23F5/00 |
主分类号 |
B08B7/00 |
| 代理机构 |
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