发明名称 |
Semiconductor memory device |
摘要 |
The semiconductor memory device includes: a memory cell including a capacitor having a charge storage node and a first MIS transistor and a second MIS transistor each having a source connected to the charge storage node; a first word line and a first bit line respectively connected to the gate and the drain of the first MIS transistor; a second word line and a second bit line respectively connected to the gate and the drain of the second MIS transistor; and a timer circuit for generating a periodic signal having a predetermined period. The first word line or the second word line is activated in response to the periodic signal.
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申请公布号 |
US6862205(B2) |
申请公布日期 |
2005.03.01 |
申请号 |
US20030372971 |
申请日期 |
2003.02.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AGATA MASASHI;TAKAHASHI KAZUNARI |
分类号 |
G11C11/403;G11C8/18;G11C11/405;G11C11/406;G11C11/408;(IPC1-7):G11C11/24;G11C7/00;G11C7/02;G11C8/00;G11C11/34 |
主分类号 |
G11C11/403 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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