发明名称 |
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
摘要 |
Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
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申请公布号 |
US6861271(B2) |
申请公布日期 |
2005.03.01 |
申请号 |
US20030633652 |
申请日期 |
2003.08.05 |
申请人 |
THE NATIONAL UNIVERSITY OF SINGAPORE;INSTITUTE OF MATERIALS RESEARCH & ENGINEERING |
发明人 |
CHUA SOO JIN;LI PENG;HAO MAOSHENG;ZHANG JI |
分类号 |
H01L21/20;H01L21/205;H01L33/00;H01L33/06;H01L33/32;H01S5/34;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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