| 摘要 |
A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n<+> layer of a high carrier density, which is about 4.0 mum thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1-xN (0<x<1) about 3000 Å thick is formed on the high carrier density n<+> layer. Then, an n-type clad layer of GaN about 250 Å thick is laminated on the intermediate layer. Further, three well layers of Ga0.8In0.2N about 30 Å thick each and two barrier layers of GaN about 70 Å thick each are laminated alternately on the n-type clad layer to thereby form a light-emitting layer of a structure with two multilayer quantum well (MQW) cycles.
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