发明名称 Memory system with reduced refresh current
摘要 The present invention is a random access memory device with reduced refresh current and method for use in the same. The memory device includes a memory array with a plurality of memory cells. The memory cells are configured to hold a charge. A command block is coupled to the memory bank and is configured to receive refresh commands that are used to periodically refresh the memory cells. A detection circuit is coupled to the command block and to the memory array. The detection circuit is configured to store a hit detect signal when the memory array is accessed. The detection circuit also receives the refresh command. The detections circuit enables block select signals only when the hit detect signal is stored while the refresh command is received.
申请公布号 US6862238(B1) 申请公布日期 2005.03.01
申请号 US20030672244 申请日期 2003.09.25
申请人 INFINEON TECHNOLOGIES AG 发明人 LEE JOO-SANG
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
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