发明名称 Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device
摘要 An interconnecting substrate for carrying a semiconductor device, comprising: an insulating layer; an interconnection set on an obverse surface of the insulating layer; an electrode which is set on a reverse surface side of the insulating layer and formed in such a way that, at least, a lateral face of an obverse end of the electrode is all round brought into contact with the insulating layer, while, at least, a reverse surface of the electrode is not in contact with said insulating layer; a via conductor which is disposed on an obverse surface of the electrode and formed in the insulating layer so as to connect this electrode with the interconnection; and a supporting structure on the surface of the insulating layer.
申请公布号 US6861757(B2) 申请公布日期 2005.03.01
申请号 US20020097843 申请日期 2002.03.15
申请人 NEC CORPORATION 发明人 SHIMOTO TADANORI;KIKUCHI KATSUMI;MATSUI KOJI;BABA KAZUHIRO
分类号 H01L21/48;H01L23/498;H05K1/11;H05K3/20;H05K3/46;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L21/48
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