发明名称 Semiconductor device manufacturing method
摘要 A substrate is provided having first and second formation areas. An oxide film is formed on both formation areas. An oxidation resistance film is then formed on the oxide film. The second formation area is masked by disposing a photoresist on the oxidation resistance film above the second formation area. The oxidation resistant film is removed from the first formation area and then the photoresist above the second formation area is removed. The oxide film above the first formation area is removed while using the oxidation resistant film above the second formation area as a mask. A first oxide film is formed on the first formation area followed by the removal of the oxidation resistance film above the second formation area. Subsequently, a second oxide film is formed on the second formation area. The first oxide film is designed to have thickness different from the second oxide film.
申请公布号 US6861372(B2) 申请公布日期 2005.03.01
申请号 US20010891580 申请日期 2001.06.26
申请人 SANYO ELECTRIC CO., LTD. 发明人 TANIGUCHI TOSHIMITSU;FURUYA SHIGEYUKI
分类号 H01L29/78;H01L21/32;H01L21/8234;H01L27/088;(IPC1-7):H01L21/469 主分类号 H01L29/78
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