发明名称 |
Process for manufacturing thin film transistor on unannealed glass substrate |
摘要 |
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
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申请公布号 |
US6861299(B2) |
申请公布日期 |
2005.03.01 |
申请号 |
US20030404060 |
申请日期 |
2003.04.02 |
申请人 |
HITACHI, LTD. |
发明人 |
HORIKOSHI KAZUHIKO;OGATA KLYOSHI;TAMURA TAKUO;NAKAHARA MIWAKO;OHKURA MAKOTO;ORITSUKI RYOJI;NAKANO YASUSHI;SHIBA TAKEO |
分类号 |
G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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