METHOD FOR ETCHING SEMICONDUCTOR DEVICE CAPABLE OF PERFORMING BIDIRECTIONAL ETCHING ON SUBSTRATE SURFACE

摘要

PURPOSE: A method for etching semiconductor devices is provided to increase integrity of the semiconductor device by performing a bidirectional etching on a substrate surface. CONSTITUTION: An etching species atmosphere(80) is generated on a semiconductor device having a main surface and a sidewall. An electric field is applied to accelerate the etching species in one direction and a magnetic field(B) is applied along a plane that crosses the one direction at a specific angle such that the sidewall is etched. The magnetic field is rotated along with a plane crossing an application direction of the electric field at a specific angle. The etching species move spirally along with the application direction of the electric field.