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发明名称
USE OF FLUORINE IMPLANTATION TO FORM A CHARGE BALANCED NITRIDED GATE DIELECTRIC LAYER
摘要
申请公布号
SG108898(A1)
申请公布日期
2005.02.28
申请号
SG20030000168
申请日期
2003.01.25
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人
YU MO-CHIUN;LIN SHYUE-SHYH
分类号
H01L21/265;H01L21/762;H01L21/8234;(IPC1-7):H01L21/823
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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