发明名称 APPARATUS FOR ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION WITH PLURAL INJECTING HOLES ON BAFFLE
摘要 PURPOSE: An apparatus for atmosphere pressure chemical vapor deposition is provided to prevent vortex of an air curtain gas due to shortage of gas injecting holes by using plural injecting holes on a baffle. CONSTITUTION: An apparatus for atmosphere pressure chemical vapor deposition includes a plurality of injectors for injecting gases required for a thin film vaporization operation. A plurality of baffles(205) are implemented in a predetermined frame among the injectors and inject an air curtain gas having a predetermined pressure high enough to prevent reaction gases from being mixed with one another. More than five gas injecting holes(206) supply the air curtain gas to each of the baffles and are formed with a predetermined shape on the predetermined frame implemented on each of the baffles.
申请公布号 KR20050015113(A) 申请公布日期 2005.02.21
申请号 KR20030053630 申请日期 2003.08.02
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 PYO, DAE IL
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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