发明名称 |
SPUTTERING ETCHING APPARATUS HAVING COATING LAYER OF HIGH-PURITY CERAMIC MATERIAL FORMED ON COVER OF SPUTTERING ETCHING CHAMBER |
摘要 |
PURPOSE: A sputtering etching apparatus is provided to prevent an oxidation residue from falling on a wafer during a sputtering etching process by coating a cover of a sputtering etching chamber by a high-purity ceramic material. CONSTITUTION: A sputtering etching apparatus includes a sputtering etching chamber having a cover portion. A coating layer(43) is plated on an inner portion of the cover portion to increase a surface area of the inner portion of the cover portion. The coating layer is made of micro particles ceramic material. The coating layer is made of an Al2O3 layer. The coating layer is coated by a plasma coating operation.
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申请公布号 |
KR20050015021(A) |
申请公布日期 |
2005.02.21 |
申请号 |
KR20030053478 |
申请日期 |
2003.08.01 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE, GEUN HWA |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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