METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING CRYSTAL DEFECTS ON BPSG LAYER

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor element is provided to prevent crystal defects on a BPSG(Borophospho Silicate Glass Spectroscope) layer and to obtain proper reflow characteristics by increasing B and P concentration on an USG(Undoped Silicate Glass) layer. CONSTITUTION: An interlayer dielectric is formed on a semiconductor device having an arbitrary metallic pattern(104). The metallic pattern is formed on the semiconductor substrate(102). A thick interlayer dielectric(106) is formed on the semiconductor substrate. A thin block layer(108) is formed on the interlayer dielectric. An annealing operation is performed in a B and/or P dopant atmosphere to increase the B and/or P concentration on the block layer.