MEMORY CELL ACCESS CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE FOR WRITING THE SAME DATA IN ALL CELLS REGARDLESS OF CELL STRUCTURE

摘要

PURPOSE: A memory cell access circuit of a semiconductor memory device is provided to correctly test the semiconductor memory device by writing the same data in all cells regardless of a cell structure. CONSTITUTION: A memory cell access circuit of a semiconductor memory device comprises plural memory cells; a test mode circuit(72) for generating a high state setup signal(HSS) or a low state setup signal(LSS) while writing the data in the plural memory cells; plural test data input part(74) for applying the same data to bit lines of the plural memory cells in response to the high state setup signal(HSS) and the low state setup signal(LSS) from the test mode circuit. Wherein, the test data input part(74) applies high data to the bit lines while the test mode circuit generates the high state setup signal(HSS), and applies low data to the bit lines while the test mode circuit generates the low state setup signal(LSS).