| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) substrate is provided to reduce light leakage generated around a data line and increase the aperture ratio of pixels by forming a semiconductor layer such that the width of the semiconductor layer is wider than the width of the data line. CONSTITUTION: A TFT substrate includes an insulating substrate, a gate line(121), storage electrodes(133a,133b), a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode(175), a data line(171), a passivation layer, and a pixel electrode(190). The gate line is formed on the insulating substrate and has a gate electrode(124). The storage electrodes are extended from a storage electrode line(131) arranged in parallel with the gate line. The gate insulating layer is formed on the gate line. The semiconductor layer is formed on the gate insulating layer. The source electrode is superposed on a part of the semiconductor layer. The data line is connected to the source electrode and has a portion intersecting the gate line and a bent portion. The drain electrode is superposed on a part of the semiconductor layer. The passivation layer covers the semiconductor layer. The pixel electrode is formed on the passivation layer and electrically connected to the drain electrode. The width of the semiconductor layer is wider than the width of the data line.
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