发明名称 |
CMP POLISHING APPARATUS CAPABLE OF DETECTING ABRUPT TRANSITION OF PH OF USED SLURRY |
摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) polishing apparatus is provided to improve reliability of a semiconductor device by detecting an abrupt transition of pH of used slurry to determine a polishing end point. CONSTITUTION: A CMP polishing apparatus includes a rotating plate, a polishing head(21), a slurry provider(15), and a pH meter(31). The rotating plate includes a polishing pad provided thereon. The polishing head is provided on the rotating plate and supports a wafer to be polished. The slurry provider provides the slurry to the polishing pad. The pH meter detects pH of the used slurry falling from the polishing pad. During a planarization operation on the wafer, a polishing end point is detected from the pH value detected at the pH meter.
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申请公布号 |
KR20050014990(A) |
申请公布日期 |
2005.02.21 |
申请号 |
KR20030053432 |
申请日期 |
2003.08.01 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, SANG DEOK;KWAK, SANG HYON |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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