发明名称 CMP POLISHING APPARATUS CAPABLE OF DETECTING ABRUPT TRANSITION OF PH OF USED SLURRY
摘要 PURPOSE: A CMP(Chemical Mechanical Polishing) polishing apparatus is provided to improve reliability of a semiconductor device by detecting an abrupt transition of pH of used slurry to determine a polishing end point. CONSTITUTION: A CMP polishing apparatus includes a rotating plate, a polishing head(21), a slurry provider(15), and a pH meter(31). The rotating plate includes a polishing pad provided thereon. The polishing head is provided on the rotating plate and supports a wafer to be polished. The slurry provider provides the slurry to the polishing pad. The pH meter detects pH of the used slurry falling from the polishing pad. During a planarization operation on the wafer, a polishing end point is detected from the pH value detected at the pH meter.
申请公布号 KR20050014990(A) 申请公布日期 2005.02.21
申请号 KR20030053432 申请日期 2003.08.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SANG DEOK;KWAK, SANG HYON
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址