发明名称 THIN FILM TRANSISTOR SUBSTRATE FOR PREVENTING POOR CONTACT DUE TO CORROSION OF ALUMINUM
摘要 PURPOSE: A thin film transistor substrate is provided to prevent poor contact due to corrosion of aluminum by removing an aluminum film disposed between a shorting bar and a signal line. CONSTITUTION: A thin film transistor substrate includes a display area(A) and a periphery area(B). The display area includes a plurality of gate lines(G1,G2,Gn-1,Gn), a plurality of data lines(D1,D2,Dm-1,Dm), a plurality of thin film transistors(TFT) respectively connected to the gate lines and data lines, and a plurality of pixel electrodes respectively connected to the thin film transistors. The peripheral area is located outside the display area and includes connecting parts(129,179) extended from the gate lines and data lines. The gate lines or data lines are composed of multiple layers including an aluminum film. The aluminum film is removed in the connecting part. The thin film transistor substrate further includes shorting bars(40,41) connected to the connecting parts.
申请公布号 KR20050014980(A) 申请公布日期 2005.02.21
申请号 KR20030053417 申请日期 2003.08.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, JAE SEONG;LEE, IN SUNG;LIM, HYUN SU
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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