CMP APPARATUS AND CMP METHOD USING SURFACE RESISTANCE OF SEMICONDUCTOR SUBSTRATE TO DETERMINE EXISTENCE OF RESIDUES ON POLISHED SURFACE

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus and a CMP method are provided to improve reliability of a CMP process by measuring a surface resistance of a semiconductor substrate having an object to be polished thereon. CONSTITUTION: A polishing portion(310) performs a CMP to a polishing end point on an object on a semiconductor substrate formed by a predetermined deposition operation. A rinsing portion(320) rinses the semiconductor substrate after the CMP process. A resistance measuring portion(331) measures a surface resistance of the semiconductor substrate. A CMP controller(500) determines whether the object is polished to the polishing end point using the surface resistance from the resistance measuring portion. The CMP controller calculates a re-polishing time and controls the polishing portion to perform the re-polishing operation, when there exists polishing residue on the semiconductor substrate.