METHOD OF DEPOSITING HAFNIUM OXIDE LAYER USING MOCVD TO INCREASE THICKNESS AND DEPOSITION SPEED

摘要

PURPOSE: A method of depositing a hafnium oxide layer using MOCVD(Metal Organic Chemical Vapor Deposition) is provided to increase a thickness and a deposition speed by increasing a deposition temperature in comparison with an ALD method. CONSTITUTION: A method of depositing hafnium oxide layer using MOCVD includes a process for depositing a hafnium oxide layer by a chemical reaction between an organic source material including hafnium and a reaction gas. The organic source material including the hafnium is formed with tetrakis-ethyl-methyl-amino-hafnium. The reaction gas includes oxygen atoms and nitrogen atoms. The tetrakis-ethyl-methyl-amino-hafnium and the reaction gas are injected simultaneously into a reaction chamber.