METAL OXIDE SEMICONDUCTOR TRANSISTOR HAVING THREE-DIMENSIONAL CHANNELS TO PREVENT REDUCTION OF CONTACT AREA BETWEEN SOURCE AND DRAIN REGIONS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A metal oxide semiconductor transistor having three-dimensional channels and a fabricating method thereof are provided to prevent reduction of a contact area between source and drain regions by forming a trench within a semiconductor substrate. CONSTITUTION: An active region is projected from a predetermined region of a semiconductor substrate. An isolation layer(21A) is used for surrounding the active region and has a surface lower than an upper surface of the active region. At least one center trench is used for defining a plurality of channel regions recessed from a center part of the active region and a source/drain region for connecting both ends of the channel regions to each other. A gate electrode(25A) is used for covering sidewalls and upper surfaces of the channel regions across upper parts of the channel regions.