发明名称 |
V-SHAPED GROOVE STRUCTURE OF SILICA HYBRID PLATFORM FOR PREVENTING GENERATION OF UNDER-CUT PHENOMENON BY FORMING ETCHING MASK HAVING MINIMUM LINE WIDTH BETWEEN V-SHAPED GROOVE AND AUXILIARY V-SHAPED GROOVE |
摘要 |
PURPOSE: A V-shaped groove structure of a silica hybrid platform is provided to remove an undercut phenomenon which obstructs an optical fiber packaging by separating an etching mask based on a minimum line width between the V-shaped groove and an auxiliary V-shaped groove. CONSTITUTION: A hybrid platform(10) includes a V-shaped groove(20) for connecting an optical waveguide(11) to an optical fiber. The V-shaped groove corresponds to the optical waveguide. An auxiliary V-shaped grooves(30,31) are formed in a predetermined interval on both sides of the V-shaped groove. An etching mask is easily separated in a final process by a minimum line width between the V-shaped groove and the auxiliary V-shaped grooves. A depth and a line width of the auxiliary V-shaped grooves are smaller than a depth and a line width of the V-shaped groove.
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申请公布号 |
KR20050015517(A) |
申请公布日期 |
2005.02.21 |
申请号 |
KR20030054373 |
申请日期 |
2003.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, SUN TAE;KOO, JUN MO |
分类号 |
G02B6/40;(IPC1-7):G02B6/40 |
主分类号 |
G02B6/40 |
代理机构 |
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地址 |
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