发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD FOR IMPROVING PRODUCTIVITY AND ENHANCING RELIABILITY THEREOF
摘要 <p>PURPOSE: A semiconductor device and a fabricating method thereof are provided to improve productivity and reliability by preventing generation of cracks and on a glass substrate and separation between a semiconductor chip and a semiconductor substrate. CONSTITUTION: A supporter is attached by using an adhesive in order to coat a couple of first wires arranged in both sides of a boundary region between the semiconductor chips of a semiconductor substrate(302). A first insulating layer is exposed by etching partially the semiconductor substrate. A second insulating layer is formed on a second surface of the semiconductor substrate. A first wire is exposed by selectively etching the first and second insulating layers. A couple of second wires connected to the first wires are formed on the second surface of the semiconductor substrate. A groove is formed in the second surface of the semiconductor substrate along the boundary region. The semiconductor substrate is divided into individual semiconductor chips by performing a dicing process.</p>
申请公布号 KR20050016041(A) 申请公布日期 2005.02.21
申请号 KR20040060057 申请日期 2004.07.30
申请人 KANTO SANYO SEMICONDUCTORS CO., LTD.;SANYO ELECTRIC CO., LTD. 发明人 IIDA, MASANORI;KITAGAWA, KATSUHIKO;NOMA, TAKASHI;OTSUKA, HISAO;SEKI, YOSHINORI;SUZUKI, AKIRA;TAKAO, YUKIHIRO;WAKUI, MOTOAKI;YAMAGUCHI, KEIICHI
分类号 H01L23/12;H01L21/301;H01L23/31;H01L23/485;(IPC1-7):H01L23/12 主分类号 H01L23/12
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