RESIST PATTERN THICKENING MATERIAL, PROCESS OF FORMING RESIST PATTERN, AND PROCESS OF FABRICATING SEMICONDUCTOR DEVICE TO THICKEN EFFICIENTLY RESIST PATTERN

摘要

PURPOSE: A resist pattern thickening material, a process of forming a resist pattern, and a process of fabricating a semiconductor device are provided to thicken efficiently a resist pattern by utilizing ArF excimer laser light as exposure light during a patterning period. CONSTITUTION: A resist pattern thickening material includes a resin and a phase transfer catalyst. The resist pattern thickening material exhibits at least one of water-solubility and alkali-solubility. The phase transfer catalyst is formed with an onium salt compound. The onium salt compound is at least one of a quaternary ammonium salt, a pyridinium salt, a thiazolium salt, a phosphonium salt, a piperazinium salt, an ephedrinium salt, a quininium salt, and a cinchoninium salt.