RESIST POLYMER COMPRISING SPECIFIC REPEATING UNITS, RESIST COMPOSITION AND PATTERNING PROCESS

摘要

PURPOSE: Provided are a resist polymer which has excellent etching resistance and satisfies both high resolution and low LER in photolithography using light with a wavelength of up to 300 nm, especially ArF excimer laser light, a resist composition comprising the same, and a patterning process using the same. CONSTITUTION: The resist polymer has increased dissolution rate in an alkali developer by the action of an acid, and comprises repeating units containing at least one type for each formulae 1-3, wherein R1, R2 and R5 are each independently hydrogen atom or methyl group, R3 and R4 are each independently hydrogen atom or hydroxyl group, and X is a tertiary exo-alkyl group having a bicyclo£2.2.1|heptane skeleton, represented by any of the formula 4a to 4d(in which, R6 is a straight, branched or cyclic alkyl group having carbon atoms of 1 to 10). The resist composition comprises such resist polymer, an acid generator, an organic solvent and/or a nitrogen-containing organic compound.