发明名称 BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ESPECIALLY CAPABLE OF CORRECTING VARIATION OF LASER BEAM INTENSITY
摘要 PURPOSE: A beam homogenizer, a laser irradiation apparatus and a method for manufacturing a semiconductor device are provided to improve irradiation intensity of laser beam. CONSTITUTION: According to the beam homogenizer, an optical element system divides a laser beam into a fixed direction and then synthesizes the divided laser beam. The beam homogenizer further includes an optical element system dividing the laser beam to a direction vertical to the above direction. And a light waveguide(103) makes uniform intensity distribution of the laser beam to the fixed direction. The light waveguide has a pair of reflective planes facing with each other.
申请公布号 KR20050016120(A) 申请公布日期 2005.02.21
申请号 KR20040061261 申请日期 2004.08.04
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 TANAKA, KOICHIRO
分类号 H01S5/10;B23K26/06;B23K26/067;B23K26/073;G02B6/42;G02B27/09;G03F7/20;H01L21/26;H01S3/00;(IPC1-7):H01S5/10 主分类号 H01S5/10
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