发明名称 |
THIN-FILM TRANSISTOR OF ELECTROLUMINESCENCE DEVICE, THE ELECTROLUMINESCENCE DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor of an electroluminescence device, the electroluminescence device using the same, and a method of manufacturing the same whereby the display quality of images is improved. SOLUTION: When an image is displayed with red light, green light, and blue light that are generated by applying driving current to an organic light-emitting layer, the driving current having been applied in the forward direction from the thin-film transistor, it is possible to prevent the display quality of the image from degrading seriously. The degradation occurs when a semiconductor pattern where the driving current passes is etched or damaged during a process and the driving current is deformed or distorted while passing through the semiconductor pattern. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005045242(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20040209498 |
申请日期 |
2004.07.16 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHOI JOON-HOO;JOO IN-SU;CHOI BEOM-RAK;HUH JONG-MOO |
分类号 |
H01L51/50;H01L21/311;H01L21/336;H01L27/32;H01L29/786;H05B33/00;H05B33/10;H05B33/12;H05B33/14;(IPC1-7):H01L29/786 |
主分类号 |
H01L51/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|