发明名称 METHOD FOR FORMING SILICONE OXIDE FILM WITH SPIN-ON GLASS
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a silicone oxide film by hardening a film with spin-on glass by using an oxidizer solution. SOLUTION: The silicone oxide film is formed by the following method. The spin-on glass film including polysilazane is hardened by using the oxidizer solution and converted to the silicone oxide film by applying heat treatment one or more times in a process for manufacturing a semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005045230(A) 申请公布日期 2005.02.17
申请号 JP20040198243 申请日期 2004.07.05
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KO ONKI;KIM KOKON;RA KEITAI;GU SHUZEN
分类号 H01L21/76;H01L21/31;H01L21/316;H01L21/768;H01L23/522;H01L27/08;(IPC1-7):H01L21/316 主分类号 H01L21/76
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