发明名称 |
METHOD FOR FORMING SILICONE OXIDE FILM WITH SPIN-ON GLASS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicone oxide film by hardening a film with spin-on glass by using an oxidizer solution. SOLUTION: The silicone oxide film is formed by the following method. The spin-on glass film including polysilazane is hardened by using the oxidizer solution and converted to the silicone oxide film by applying heat treatment one or more times in a process for manufacturing a semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005045230(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20040198243 |
申请日期 |
2004.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KO ONKI;KIM KOKON;RA KEITAI;GU SHUZEN |
分类号 |
H01L21/76;H01L21/31;H01L21/316;H01L21/768;H01L23/522;H01L27/08;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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