| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory which improves transistor characteristics and its manufacturing method. SOLUTION: The magnetic random access memory includes a silicon substrate 11, a transistor having a gate electrode formed on the silicon substrate 11 through a gate insulating film and having a diffusion layer formed in the silicon substrate 11, first insulating films 21, 26 formed on the silicon substrate 11 and the transistor, a multilayer wiring formed in the first insulating films 21, 26, and a magneto-resistive element 32 formed above the first insulating films 21, 26. At least a part of a dangling bond within the silicon substrate 11 is terminated by silicon-deuterium bonds. COPYRIGHT: (C)2005,JPO&NCIPI
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