| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a bismuth layer-like perovskite structure ferroelectric thin film having a desired composition without a hetero-phase, and to provide the bismuth layer-like perovskite structure ferroelectric thin film superior in crystallinity. SOLUTION: The manufacturing method includes a substrate 10, a conductive thin film 12 formed on the substrate 10, and an oriented ferroelectric thin film 14 of oxide which is formed on the conductive thin film 12 and has a bismuth layer-like perovskite structure. The ferroelectric thin film 14 is formed on the conductive thin film 12, and has a layer 140 (a base layer and a composition change layer if they are suitable) where a composition gradually changes from a conductive thin film interface toward an upper layer side in a film thickness direction, and a layer 141 which succeeds the layer 140 and whose composition is constant. COPYRIGHT: (C)2005,JPO&NCIPI
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