| 摘要 |
A method of recovering a first substrate, including the steps of: sticking a second substrate on a semiconductor layer epitaxially grown on the first substrate; and separating the semiconductor layer and the first substrate. Furthermore, a method of reproducing a first substrate, including the step of surface processing the first substrate separated. Furthermore, a method of reproducing a first substrate, including the step of homoepitaxially growing the first substrate surface processed. Furthermore, a method of producing a semiconductor wafer, including the step of epitaxially growing a semiconductor layer on a first substrate. Thus a group III nitride or similar, expensive substrate can be used to efficiently and economically, epitaxially grow a group III nitride or similar semiconductor layer.
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