发明名称 |
Structure and method of forming integrated circuits utilizing strained channel transistors |
摘要 |
A semiconductor device or circuit is formed on a semiconductor substrate with first and second semiconductor materials having different lattice-constants. A first transistor includes a channel region formed oppositely adjacent a source and drain region. At least a portion of the source and drain regions are formed in the second semiconductor material thereby forming lattice-mismatched zones in the first transistor. A second component is coupled to the transistor to form a circuit, e.g., an inverter. The second component can be a second transistor having a conductivity type differing from the first transistor or a resistor.
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申请公布号 |
US2005035369(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20030729092 |
申请日期 |
2003.12.05 |
申请人 |
LIN CHUN-CHIEH;LEE WEN-CHIN;YEO YEE-CHIA;HU CHENMING |
发明人 |
LIN CHUN-CHIEH;LEE WEN-CHIN;YEO YEE-CHIA;HU CHENMING |
分类号 |
H01L21/336;H01L21/8238;H01L27/11;H01L29/78;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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