发明名称 Non-volatile memory and non-volatile memory data rewriting method
摘要 A nonvolatile memory and a data rewriting method of the nonvolatile memory that can readily detect a state of operation at a time of a system failure due to a power failure or the like and quickly and reliably restore the nonvolatile memory to a normal storage state by a simple method. In the nonvolatile memory including a physical block as a storage unit, the physical block having a data area (1) and a redundant area (2), the redundant area (2) includes: a logical block address storing area (3) for storing an address of a corresponding logical block; a previously used physical block address storing area (4) for storing an address of a physical block to be erased; and a status information storing area (6) for storing status information for distinguishing a state of operation in each stage occurring in performing data rewriting operation on the physical block.
申请公布号 US2005036390(A1) 申请公布日期 2005.02.17
申请号 US20040484322 申请日期 2004.10.08
申请人 NAKADA MITSURU;TOMITA MITSUHIKO 发明人 NAKADA MITSURU;TOMITA MITSUHIKO
分类号 G06F11/14;G11B20/18;G11C16/10;(IPC1-7):G11C8/02 主分类号 G06F11/14
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