发明名称 |
Non-volatile memory and non-volatile memory data rewriting method |
摘要 |
A nonvolatile memory and a data rewriting method of the nonvolatile memory that can readily detect a state of operation at a time of a system failure due to a power failure or the like and quickly and reliably restore the nonvolatile memory to a normal storage state by a simple method. In the nonvolatile memory including a physical block as a storage unit, the physical block having a data area (1) and a redundant area (2), the redundant area (2) includes: a logical block address storing area (3) for storing an address of a corresponding logical block; a previously used physical block address storing area (4) for storing an address of a physical block to be erased; and a status information storing area (6) for storing status information for distinguishing a state of operation in each stage occurring in performing data rewriting operation on the physical block.
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申请公布号 |
US2005036390(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040484322 |
申请日期 |
2004.10.08 |
申请人 |
NAKADA MITSURU;TOMITA MITSUHIKO |
发明人 |
NAKADA MITSURU;TOMITA MITSUHIKO |
分类号 |
G06F11/14;G11B20/18;G11C16/10;(IPC1-7):G11C8/02 |
主分类号 |
G06F11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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