发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a simple structure capable of supplying large electric power by using a waveguide, treating a rectangular large-area substrate by plasma with excellent uniformity, and to provide a plasma processing method. <P>SOLUTION: The plasma processing apparatus comprises an electromagnetic wave source 3 outputting electromagnetic waves; a waveguid part 17 for distributing electromagnetic waves output from the source 3; a plurality of waveguides 1 coupled respectively with the waveguide part 17 and disposed on the same plane; a plurality of slots 2 disposed at each waveguide 1; at least one electromagnetic wave emitting window 4 disposed oppositely to each slot 2; and a vacuum container 5 for generating plasma with the electromagnetic waves emitted from the window 4. The wavwguide part 17 is disposed on the plurality of wavegiudes 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005044793(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20040197101 |
申请日期 |
2004.07.02 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD |
发明人 |
NAKADA YUKIHIKO;IDE TETSUYA |
分类号 |
H05H1/46;C23C16/511;H01L21/205;H01L21/304;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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