| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an insulating film to be used for an electronic device such as a semiconductor device, especially a copper diffused barrier insulating film having a copper diffusion preventing function for the copper wires and including silicon and carbon as the main components, the insulating film obtained by the method and wiring structure coated with the obtained insulating film. SOLUTION: In the method for forming the copper diffused barrier insulating film on the surface of a base material by reacting or resolving at least a part of gas, the gas contains a silicon compound SiR<SP>1</SP><SB>x</SB>R<SP>2</SP><SB>y</SB>R<SP>3</SP><SB>z</SB>R<SP>4</SP><SB>4-(x+y+z)</SB>(each of R<SP>1</SP>, R<SP>2</SP>, R<SP>3</SP>and R<SP>4</SP>independently expresses a hydrocarbon radical or a hydrogen atom, at least one of the R<SP>1</SP>, R<SP>2</SP>, R<SP>3</SP>and R<SP>4</SP>hasπelectrons, x, y and z are integers of 0 to 4 and 0≤x+y+z≤4). COPYRIGHT: (C)2005,JPO&NCIPI
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