发明名称 MANUFACTURING METHOD FOR HOLLOW STRUCTURE, MANUFACTURING METHOD FOR MEMS ELEMENT, AND MANUFACTURING METHOD FOR ELECTRON BEAM MASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a hollow structure, a manufacturing method for an MEMS element, and a manufacturing method for an electron beam mask capable of easily and inexpensively manufacturing by using a metallic film as a sacrificial layer and optimally combining a film material constituting the structure and an etchant of the sacrificial layer. <P>SOLUTION: The manufacturing method for the hollow structure includes a step of forming the sacrificial layer 7 made of a first metallic material at a position where a cavity is to be formed on a substrate 1, a step of forming the film 9 made of a second metallic material on the sacrificial layer 7, and a step of forming the cavity 14 by etching off the sacrificial layer 7 with an etchant which does not damage the second metallic material. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005040885(A) 申请公布日期 2005.02.17
申请号 JP20030201968 申请日期 2003.07.25
申请人 SONY CORP 发明人 OKAMOTO AKIRA
分类号 B81C1/00;B81B3/00;H01L21/027;(IPC1-7):B81C1/00 主分类号 B81C1/00
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