| 摘要 |
PROBLEM TO BE SOLVED: To suppress the diffusion of the atoms, of such as boron, for composing a gate electrode into a gate insulating film when using metal silicate as the gate insulating film, and to suppress the increase of the interface level of a silicon substrate. SOLUTION: A semiconductor device has a field-effect transistor where the gate electrode 104 is formed on the silicon substrate 101 via the gate insulating film 103. The gate insulating film 103 contains metal, silicon, oxygen, and nitrogen. The concentration of the nitrogen in the film 103 is maximized at the gate electrode interface and is minimized at the substrate interface. The concentration of the metal in the gate insulating film 103 is minimized at the gate electrode interface and is maximized at the substrate interface section. COPYRIGHT: (C)2005,JPO&NCIPI
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