发明名称 Storage device
摘要 A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.
申请公布号 US2005035373(A1) 申请公布日期 2005.02.17
申请号 US20040883922 申请日期 2004.07.02
申请人 ISHIDA MINORU;ARATANI KATSUHISA;KOUCHIYAMA AKIRA;TSUSHIMA TOMOHITO 发明人 ISHIDA MINORU;ARATANI KATSUHISA;KOUCHIYAMA AKIRA;TSUSHIMA TOMOHITO
分类号 G11C13/00;G11C7/00;G11C11/00;G11C16/02;H01L27/10;H01L27/105;H01L27/24;(IPC1-7):H01L29/94 主分类号 G11C13/00
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