发明名称 |
Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same |
摘要 |
A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.
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申请公布号 |
US2005035343(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040910350 |
申请日期 |
2004.08.04 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
CHOI BYOUNG-DEOG;KIM WON-SIK;SO MYEONG-SEOB |
分类号 |
G09F9/30;H01L27/12;H01L27/32;H01L29/78;H01L29/786;(IPC1-7):H01L29/06 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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